Strain gradients in epitaxial ferroelectrics
نویسندگان
چکیده
منابع مشابه
Suppressed dependence of polarization on epitaxial strain in highly polar ferroelectrics.
A combined experimental and computational investigation of coupling between polarization and epitaxial strain in highly polar ferroelectric PbZr(0.2)Ti(0.8)O3 (PZT) thin films is reported. A comparison of the properties of relaxed (tetragonality c/a approximately 1.05) and highly strained (c/a approximately 1.09) epitaxial films shows that polarization, while being amongst the highest reported ...
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Nonlinear effects in the coupling of polarization with elastic strain have been predicted to occur in ferroelectric materials subjected to high electric fields. Such predictions are tested here for a PbZr0.2Ti0.8O3 ferroelectric thin film at electric fields in the range of several hundred MV/m and strains reaching up to 2.7%. The piezoelectric strain exceeds predictions based on constant piezoe...
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Use of an epitaxial conducting template has enabled the integration of epitaxial ferroelectric perovskites on silicon. The conducting template layer, LaxSr12xTiO3 ~LSTO!, deposited onto ~001! silicon wafers by molecular-beam epitaxy is then used to seed $001%-oriented epitaxial perovskite layers. We illustrate the viability of this approach using PbZr0.4Ti0.6O3 ~PZT! as the ferroelectric layer ...
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The response of fibroblast cells to periodically poled LiTaO3 ferroelectric crystals has been studied. While fibroblast cells do not show morphological differences on the two polarization directions, they show a tendency to avoid the field gradients that occur between polarization domains of the ferroelectric. The response to the field gradients is fully established after one hour, a time at wh...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2005
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.72.020102